Title :
Noise associated with distributed resistance of MOSFET gate structures in integrated circuits
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
10/1/1984 12:00:00 AM
Abstract :
The effect of thermal voltage fluctuations in a resistive gate matrix perpendicular to the direction of channel current, in a MOSFET, are treated in detail. A general formula is derived to arrive at channel current fluctuations for an arbitrary gate matrix layout. This formulation is an extension of the analysis done by Thornber and is valid for frequencies at which the distributed RC time constants associated with the gate matrix are not important. The results of this analysis can be used to design low-noise resistive gate structures.
Keywords :
Bipolar transistors; Integrated circuit noise; Laboratories; MOSFET circuits; P-n junctions; Silicon; Temperature dependence; Temperature distribution; Thermal resistance; Voltage fluctuations;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21741
