DocumentCode
1094029
Title
A novel scheme to measure the interface trap density near band edges using CCD´s
Author
Madan, Sudhir K. ; Bhaumik, Basabi
Author_Institution
MIT, Cambridge, MA
Volume
31
Issue
10
fYear
1984
fDate
10/1/1984 12:00:00 AM
Firstpage
1509
Lastpage
1511
Abstract
A new CCD-based technique to measure the interface trap density is proposed in this paper and the measured values agree with those obtained from the periodic pulse technique. The proposed technique has an operational advantage of measuring the interface state density near the band edge while operating the CCD at any convenient low frequency.
Keywords
Circuit noise; Circuit simulation; Density measurement; Electron devices; Integrated circuit interconnections; Integrated circuit noise; Optical noise; Pulse measurements; Resistors; Semiconductor device noise;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21742
Filename
1484027
Link To Document