DocumentCode :
1094029
Title :
A novel scheme to measure the interface trap density near band edges using CCD´s
Author :
Madan, Sudhir K. ; Bhaumik, Basabi
Author_Institution :
MIT, Cambridge, MA
Volume :
31
Issue :
10
fYear :
1984
fDate :
10/1/1984 12:00:00 AM
Firstpage :
1509
Lastpage :
1511
Abstract :
A new CCD-based technique to measure the interface trap density is proposed in this paper and the measured values agree with those obtained from the periodic pulse technique. The proposed technique has an operational advantage of measuring the interface state density near the band edge while operating the CCD at any convenient low frequency.
Keywords :
Circuit noise; Circuit simulation; Density measurement; Electron devices; Integrated circuit interconnections; Integrated circuit noise; Optical noise; Pulse measurements; Resistors; Semiconductor device noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21742
Filename :
1484027
Link To Document :
بازگشت