Title :
Interband Auger recombination in InGaAsP
Author :
Chiu, L.C. ; Chen, P.C. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, CA 91125
fDate :
6/1/1982 12:00:00 AM
Abstract :
The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP and InGaAsSb lasers. Good aggreement with experimental data was obtained for lasers with low nominal threshold current densities. These results demonstrate the importance of Auger recombination in the threshold characteristics of InGaAsP/InP lasers.
Keywords :
Gallium materials/lasers; Charge carrier lifetime; Current measurement; Density measurement; Gallium arsenide; Photonic band gap; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature distribution; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1982.1071648
