Title :
High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)
Author :
Laih, L.H. ; Chen, Y.-A. ; Tsay, W.-C. ; Hong, J.-W.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
5/9/1996 12:00:00 AM
Abstract :
A novel simple bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD) with an i-a-Si:H barrier layer and a phosphorus-doped n-a-Si:H light-absorbing layer was used to improve the responsivity of MSM-PD. At a bias of 10 V and an He-Ne laser incident power of 10 μW, the obtained n-a-Si:H BMSM-PD had a high responsivity of 10 A/W, a low dark current density of 2.35 pA/μm2, and a spectral response peaked at 605 nm
Keywords :
amorphous semiconductors; elemental semiconductors; metal-semiconductor-metal structures; photodetectors; silicon; 10 V; 10 muW; 605 nm; BMSM-PD; He-Ne laser; Si:H; Si:H,P; bottom-electrode metal-semiconductor-metal photodetector; dark current density; i-a-Si:H barrier layer; phosphorus-doped n-a-Si:H light-absorbing layer; responsivity; spectral response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960610
