DocumentCode :
1094091
Title :
Czochralski silicon
Author :
Thomas, Robert C.
Author_Institution :
Systonics, Inc., Winchester, MA
Volume :
31
Issue :
11
fYear :
1984
fDate :
11/1/1984 12:00:00 AM
Firstpage :
1547
Lastpage :
1549
Abstract :
When silicon technology was new there were effects and observations which went unused or unrecognized in the rush to get products to market. This paper covers one such set of observations in silicon crystal growth. It has been abstracted from a historical perspective of silicon processing being compiled for family and associates from the experiences of the author.
Keywords :
Germanium; Gold; Impurities; Iron; Laboratories; Manganese; Physics; Silicon; Solid state circuits; Temperature measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21750
Filename :
1484035
Link To Document :
بازگشت