• DocumentCode
    1094091
  • Title

    Czochralski silicon

  • Author

    Thomas, Robert C.

  • Author_Institution
    Systonics, Inc., Winchester, MA
  • Volume
    31
  • Issue
    11
  • fYear
    1984
  • fDate
    11/1/1984 12:00:00 AM
  • Firstpage
    1547
  • Lastpage
    1549
  • Abstract
    When silicon technology was new there were effects and observations which went unused or unrecognized in the rush to get products to market. This paper covers one such set of observations in silicon crystal growth. It has been abstracted from a historical perspective of silicon processing being compiled for family and associates from the experiences of the author.
  • Keywords
    Germanium; Gold; Impurities; Iron; Laboratories; Manganese; Physics; Silicon; Solid state circuits; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21750
  • Filename
    1484035