• DocumentCode
    1094167
  • Title

    Device characteristics of (Al,Ga)As lasers with Ga(As,Sb) active layers

  • Author

    Anthony, Philip J. ; Zilko, John L. ; Pawlik, Jonathan R. ; Swaminathan, V. ; Hartman, Robert L.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    18
  • Issue
    7
  • fYear
    1982
  • fDate
    7/1/1982 12:00:00 AM
  • Firstpage
    1094
  • Lastpage
    1100
  • Abstract
    Device characteristics of double heterostructure lasers with Al0.4Ga0.6As confinement layers and GaAs0.99Sb0.01active layers are presented. Average emission wavelengths have been increased from 0.87 μm for undoped active layers to 0.88 μm for 2 \\times 10^{17} cm-3Ge doped active layers with a "wash" melt preceding the growth of the active layer and to 0.89 μ for 1 \\times 10^{18} cm-3Mg doped active layers grown following a "wash" melt. Threshold currents for lasers from 21 wafers are examined for several growth conditions and compared with Al0.08Ga0.92As active layer devices. Device resistance, external quantum efficiency, device degradation, and pulsed and CW threshold currents as a function of temperature are also discussed.
  • Keywords
    Bibliographies; Gallium materials/lasers; Degradation; Fiber lasers; Gallium arsenide; Gas lasers; Lattices; Optical design; Optical fiber losses; Optical pulses; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1982.1071655
  • Filename
    1071655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1094167