DocumentCode :
1094246
Title :
Heterostructure lasers
Author :
Hayashi, Izuo
Author_Institution :
Optoelectronics Joint Research Laboratory, Kawasaki, Japan
Volume :
31
Issue :
11
fYear :
1984
fDate :
11/1/1984 12:00:00 AM
Firstpage :
1630
Lastpage :
1642
Abstract :
The demonstration of CW room temperature operation of the heterostructure laser was the beginning of a new era in semiconductor devices. This era introduced the use of heterojunctions to create electrical as well as optical boundaries. New developments in epitaxial techniques provided the base for heterojunction devices. This work describes the interdisciplinary research effort that lead to the breakthrough which enabled the room temperature operation of semiconductor lasers.
Keywords :
Artificial intelligence; Current density; Gallium arsenide; Gas lasers; Optical fiber communication; P-n junctions; Photonic crystals; Semiconductor lasers; Stimulated emission; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21764
Filename :
1484049
Link To Document :
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