DocumentCode :
1094313
Title :
Ultrahigh-voltage high-current gate turn-off thyristors
Author :
Yatsuo, Tsutomu ; Nagano, Takahiro ; Fukui, Hiroshi ; Okamura, Masahiro ; Sakurada, Shuroku
Author_Institution :
Hitachi, Ltd., Hitachi, Ibaraki, Japan
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1681
Lastpage :
1686
Abstract :
High-power GTO´s with ratings of 2500 V . 2000 A have been developed, and a 4500 V . 2000 A GTO was trial fabricated and performance tested, for use in traction motor control equipment. Their low ON-state voltage was attained by applying a unique anode emitter shorting structure which does not require doping of a lifetime killer such as gold to obtain suitable GTO characteristics. Their high interrupt current was obtained by introducing a ring-shaped gate structure which has uniform operation between many segments in the devices during turn-off process.
Keywords :
Anodes; Charge carrier lifetime; Doping; Electric variables; Gold; Structural engineering; Testing; Thyristors; Traction motors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21771
Filename :
1484056
Link To Document :
بازگشت