• DocumentCode
    1094441
  • Title

    A new field isolation technology employing lift-off patterning of sputtered SiO2films

  • Author

    Yachi, Toshiaki ; Serikawa, Tadash ; Wada, Tsutomu

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1748
  • Lastpage
    1752
  • Abstract
    A new field isolation technology for LSI devices is described. This technology features low-temperature (<150° C) sputtered SiO2and photoresist lift-off. MOS devices are fabricated using this isolation technology. It is shown that bird´s-beak-free field oxide is formed using a fabrication process which is shorter than that using other isolation methods. It is shown that the narrow-channel effect is significantly reduced in MOSFET´s fabricated with this technology.
  • Keywords
    Boron; Fabrication; Isolation technology; Large scale integration; Physics; Resists; Semiconductor films; Silicon; Sputter etching; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21782
  • Filename
    1484067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1094441