DocumentCode :
1094463
Title :
1.5 µm range InGaAsP/InP distributed feedback lasers
Author :
Sakai, Kazuo ; Utaka, Katsuyuki ; Akiba, Shigeyuki ; Matsushima, Yuichi
Author_Institution :
KDD Research and Development Laboratories, Tokyo, Japan
Volume :
18
Issue :
8
fYear :
1982
fDate :
8/1/1982 12:00:00 AM
Firstpage :
1272
Lastpage :
1278
Abstract :
Lasing characteristics of InGaAsP/InP distributed feedback (DFB) lasers in the 1.5 μm range were studied theoretically and experimentally. Wave propagation in five-layer DFB waveguides were analyzed to estimate the effect of the structural parameters on threshold conditions. A brief consideration on designing a low threshold laser and its lasing wavelength was made. DFB buried heterostructure lasers with fundamental grating emitting at 1.53 μm were prepared by liquid phase epitaxial techniques. CW operation was confirmed in the temperature rangeof -20° to 58°C, and a CW threshold current was as low as 50 mA at room temperature. A stable single longitudinal mode operation was observed both in dc condition and in modulated condition by a pseudorandom pulse current at 500 Mbits/s. No significant increase in the threshold current was observed after 1400 h continuous CW operation at 20°C.
Keywords :
Distributed feedback (DFB) lasers; Gallium materials/lasers; Optical fiber transmitters; Distributed feedback devices; Indium phosphide; Laser feedback; Laser theory; Optical propagation; Pulse modulation; Structural engineering; Temperature distribution; Threshold current; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1982.1071682
Filename :
1071682
Link To Document :
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