Title :
High Power 20-GHz Photodiodes With Resonant Microwave Circuits
Author :
Kejia Li ; Xiaojun Xie ; Qiugui Zhou ; Beling, Andreas ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report the design, fabrication, and characterization of resonant microwave circuits integrated with InGaAs/InP modified unitravelling-carrier photodiodes. The photodiodes were flip-chip bonded on AlN substrates with coplanar waveguide circuits. The RF output power levels of 23 and 21.6 dBm at 20 GHz are demonstrated for microwave open stubs and shorted stubs, respectively.
Keywords :
III-V semiconductors; aluminium compounds; coplanar waveguides; gallium arsenide; indium compounds; integrated optics; microwave photonics; optical design techniques; optical fabrication; optical waveguides; photodiodes; AlN; InGaAs-InP; InGaAs-InP modified unitravelling-carrier photodiodes; aluminium nitride substrates; coplanar waveguide circuits; frequency 20 GHz; high-power photodiodes; integrated optics; resonant microwave circuit characterization; resonant microwave circuit design; resonant microwave circuit fabrication; resonant microwave circuits; Integrated circuit modeling; Photoconductivity; Photodiodes; Photonics; Power generation; RLC circuits; Radio frequency; Microwave photonics; optical fiber communication; photodiodes; tunable circuits and devices;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2322496
