DocumentCode
1094706
Title
Stationary state model for normal metal tunnel junction phenomena
Author
Whiteley, Stephen R. ; Gustafson, T. Kenneth
Author_Institution
University of California, Berkeley, CA, USA
Volume
18
Issue
9
fYear
1982
fDate
9/1/1982 12:00:00 AM
Firstpage
1387
Lastpage
1398
Abstract
A model applicable to normal metal tunnel junctions is presented. This model, referred to herein as the stationary state model, is an extension of the extended basis function theory of Kleinman and Duke. Under the assumption that elastic tunneling is the dominant transport mechanism under static bias, we have extended the theory to include the case where there is an ac component of bias potential, and we have derived the fluctuation spectrum. In this approach structure eigenstates are used as the basis, allowing observables to be evaluated without recourse to the perturbation theory inherent in the transfer Hamiltonian model. Comparison is made to the appropriate results of the first order transfer Hamiltonian model, and it is found that there is close but not always exact agreement to lowest order in the tunneling exponential. The stationary state model should be accurate with large barrier transmission, as it includes all orders of the tunneling exponential. The model as presented here should be applicable to normal metal tunnel junctions, where elastic tunneling is the dominant transport mechanism (under static bias), up to infrared excitation frequencies.
Keywords
Tunnel devices/effects; Fluctuations; Frequency response; Helium; Infrared detectors; Microscopy; Phonons; Predictive models; Stationary state; Superconductivity; Tunneling;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1982.1071703
Filename
1071703
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