• DocumentCode
    1094823
  • Title

    Anomalous MOS capacitance behavior in depletion-mode structures

  • Author

    Jaeger, R.C. ; Gaensslen, F.H.

  • Author_Institution
    Auburn University, AL
  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1916
  • Lastpage
    1918
  • Abstract
    Room-temperature and liquid-nitrogen temperature capacitance measurements on enclosed-channel depletion-mode structures have shown anomalous behavior in the accumulation region of operation. Simulation has shown that the potential minimum in the buried channel of the depletion-mode device prevents high frequency variation in the accumulation-layer hole concentration. It is postulated that similar effects may be expected in depletion-mode devices using recessed oxide isolation.
  • Keywords
    Capacitance measurement; Charge coupled devices; Coupling circuits; Current measurement; Dark current; Electron devices; Geometry; Shift registers; Solid state circuits; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21815
  • Filename
    1484100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1094823