DocumentCode
1094824
Title
Computation methods for one-dimensional bipolar charge injection
Author
Zahn, M. ; Antis, Lori L. ; Mescua, Jorge
Author_Institution
High Voltage Res. Lab., MIT, Cambridge, MA, USA
Volume
24
Issue
3
fYear
1988
Firstpage
411
Lastpage
421
Abstract
Kerr electrooptic field-mapping measurements have shown strong space charge effects in high-voltage stressed dielectrics, where the magnitude and sign of injected charge depends on electrode material. With appropriate choice of electrode material combinations and voltage polarity is possible to have uncharged, unipolar positively or negatively charged, or bipolar charged dielectrics. The bipolar homocharge case lowers the electric field at both electrodes due to space-charge shielding, and thus allows a higher voltage without breakdown. Using charge-transport analysis the authors consider the general case of charge injection from both electrodes and solve time and space dependences of the electric field and charge distributions and the time dependences of the terminal voltage and current. This analysis extends earlier work by including nonequilibrium charge dissociation and recombination so that the effective ohmic conductivity is not constant but varies with time and position due to local net charge density. Specific cases discussed are the open-circuit voltage decay of an initially charged capacitor, the charging and discharging by a Marx generator, and alternating voltage excitations
Keywords
Kerr electro-optical effect; charge-coupled devices; electrodes; HV stressed dielectrics; Kerr electrooptic field-mapping measurements; Marx generator; charge-transport analysis; electrode material combinations; nonequilibrium charge dissociation; ohmic conductivity; one-dimensional bipolar charge injection; open-circuit voltage decay; space charge effects; voltage polarity; Breakdown voltage; Capacitors; Charge measurement; Conductivity; Current measurement; Dielectric materials; Dielectric measurements; Electrodes; Space charge; Stress measurement;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/28.2889
Filename
2889
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