Title :
Temperature dependence of peak drift velocity and threshold field in n-In0.53Ga0.47As
Author :
Bhattacharyya, Arundhati ; Ghosal, A. ; Chattopadhyay, D.
Author_Institution :
Institute of Radio Physics and Electronics, Calcutta, India
fDate :
12/1/1984 12:00:00 AM
Abstract :
The peak drift velocity (vp) and the threshold field (Et) for negative differential mobility in In0.53Ga0.47As are calculated in the temperature range of 125-400 K using the Monte Carlo technique. With an increase of temperature, Etincreases but vpdecreases for a pure as well as for an impure material. Etis smaller and vpis larger than the corresponding quantities in GaAs.
Keywords :
Acoustic scattering; Electron mobility; Gallium arsenide; Gold; Lattices; Monte Carlo methods; Optical materials; Optical scattering; Temperature dependence; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21816
