Title :
A 2—18-GHz monolithic distributed amplifier using dual-gate GaAs FET´s
Author :
Kennan, Wayne ; Andrade, Thomas ; Huang, Charles C.
Author_Institution :
Avantek, Inc., Santa Clara, CA
fDate :
12/1/1984 12:00:00 AM
Abstract :
This paper describes a 2-18-GHz monolithic distributed amplifier with over 6-dB gain, ± 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm, The amplifier is designed with dual-gate GaAs FET´s instead of single-gate FET´s for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.
Keywords :
Bandwidth; Distributed amplifiers; Equivalent circuits; FETs; Gallium arsenide; Impedance; Noise measurement; Power measurement; Radio frequency; Transmission line theory;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21820
