DocumentCode
1094930
Title
3.3 V operation GaAs power MESFETs with 65% power-added efficiency for hand-held telephones
Author
Lee, J.-L. ; Kim, Heonhwan ; Mun, J.K. ; Kwon, Oh-Kyong ; Lee, John Jaehwan ; Park, Hyung-Min ; Park, S.-C.
Author_Institution
Semicond. Div., Electron. & Telecommun. Res. Inst., Taejeon
Volume
30
Issue
9
fYear
1994
fDate
4/29/1994 12:00:00 AM
Firstpage
739
Lastpage
740
Abstract
High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3 V have been developed. The MESFETs with 0.6 μm gate length and 12 mm gate width show a maximum drain current density of 310 mA/mm and a uniform transconductance of around 112 mS, ranging from Vgs=-1.8 V to 0.5 V. The device tested at 3.3 V drain bias and 900 MHz demonstrates an output power of 30.9 dBm with associate power-added-efficiency of 65% for an input power of 20 dBm
Keywords
III-V semiconductors; Schottky gate field effect transistors; cellular radio; gallium arsenide; power transistors; radiotelephony; -1.8 to 0.5 V; 0.6 mil; 112 mS; 12 mm; 3.3 V; 65 percent; 900 MHz; GaAs; GaAs power MESFETs; UHF; drain bias; hand-held telephones; high-low doped device; metal semiconductor field effect transistors; power-added efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940477
Filename
289152
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