Title :
IIA-1 High performance (AlAs/n-GaAs superlattice)/GaAs 2DEGFET´s with stabilized threshold voltage
Author :
Baba, Toshihiko ; Mizutani, Tomoko ; Ogawa, Michiko
fDate :
12/1/1984 12:00:00 AM
Keywords :
Circuits; Electrons; Frequency conversion; Gallium arsenide; HEMTs; Lighting; MODFETs; Superlattices; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21826
