DocumentCode
1094984
Title
IIA-3 an (AlGa)As/GaAs/(AlGa)As selectively doped double-heterojunction FET with extremely high channel conductivity
Author
Inoue, Ken ; Sakaki, H.
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1962
Lastpage
1963
Keywords
Charge carrier density; Conductivity; Electron mobility; FETs; Gallium arsenide; HEMTs; Heterojunctions; MODFET circuits; MODFET integrated circuits; Ring oscillators;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21827
Filename
1484112
Link To Document