DocumentCode :
1094994
Title :
IIA-2 selectively doped heterostructure transistors for ultra high-speed integrated circuits
Author :
Pei, S.S. ; Hendel, R.H. ; Kiehl, R.A. ; Tu, C.W. ; Feuer, Mark D. ; Dingle, R.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1962
Lastpage :
1962
Keywords :
Conductivity; Electron mobility; FETs; Frequency conversion; Gallium arsenide; HEMTs; Heterojunctions; High speed integrated circuits; MODFETs; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21828
Filename :
1484113
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1094994
