Title :
IIA-4 A self-aligned gate process for IC´s based on modulation-doped (Al, Ga)As/GaAs FET´s
Author :
Abrokwah, J.K. ; Shur, Michael S.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Electrons; Epitaxial layers; FETs; Fabrication; Gallium arsenide; HEMTs; Ion implantation; MODFET circuits; MODFET integrated circuits; Ring oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21829
