DocumentCode :
1095016
Title :
Optimal design of Pb1-xSnxTe double heterostructure injection lasers
Author :
Rosman, Reli ; Katzir, Abraham
Author_Institution :
Tel-Aviv University, Tel-Aviv, Israel
Volume :
19
Issue :
1
fYear :
1983
fDate :
1/1/1983 12:00:00 AM
Firstpage :
73
Lastpage :
77
Abstract :
Results of optimization calculations are presented for broad area double heterostructure PbSnTe lasers. It was found that by adequately choosing the parameters of lasers, the threshold current densities can be substantially lowered. In particular, threshold current densities of 30 A/cm2at 77 K and of 2 kA/cm2at 200 K are predicted for devices which emit a wavelength of 10.6 μm at 77 K.
Keywords :
CW lasers; Lead materials/devices; Semiconductor lasers; DH-HEMTs; Laser theory; Lattices; Lead; Optical waveguides; Physics; Temperature; Threshold current; Tunable circuits and devices; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1983.1071732
Filename :
1071732
Link To Document :
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