DocumentCode

1095054

Title

IIA-7 a GaAs gate heterojunction FET

Author

Solomon, Paul M. ; Knoedler, C.M. ; Wright, S.L.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1964

Lastpage

1964

Keywords

Annealing; FETs; Fabrication; Gallium arsenide; Heterojunctions; Implants; Molecular beam epitaxial growth; Resists; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21833

Filename

1484118