Title :
SECS: A New Single-Electron-Circuit Simulator
Author :
Zardalidis, George ; Karafyllidis, Ioannis G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Democritus Univ. of Thrace, Xanthi
Abstract :
Downscaling of the devices of integrated circuits (ICs) has reached the verge of nanometer scale. On this scale, new phenomena of a quantum nature are starting to appear in ICs. The necessity of the development of new tools for studding the behavior of such circuits that take into account these phenomena is evident. For this reason, a new system for the design and simulation of single electron circuits called SECS has been developed. The operation of single electron circuits is based on the tunneling effect. The stochastic nature due to tunneling is incorporated in the simulation of single electron circuits using the Monte Carlo method. The novelty of the SECS system is that it provides the behavior of single electron circuits in an actual time scale, making thus easier and more complete the study of the phenomena that take place at an arbitrary single electron circuit.
Keywords :
Monte Carlo methods; circuit simulation; integrated circuits; nanotechnology; Monte Carlo method; integrated circuits; nanometer scale; single-electron-circuit simulator; Coulomb blockade; Monte Carlo method; Single electron simulation; Single-electronics; coulomb blockade; single electron box; single electron box,; single electron double junction; single electron simulation; single electron transistor; single electron transistor (SET); single electron tunneling; single-electron double junction; single-electronics;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2008.920070