• DocumentCode
    1095059
  • Title

    Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses

  • Author

    Emelianov, V.V. ; Zebrev, G.I. ; Ulimov, V.N. ; Useinov, R.G. ; Belyakov, V.V. ; Pershenkov, V.S.

  • Author_Institution
    Res. Inst. of Sci. Instrum., Moscow, Russia
  • Volume
    43
  • Issue
    3
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    805
  • Lastpage
    809
  • Abstract
    The postirradiation response of n-channel MOSTs during thermal and electrical stresses is investigated. It is found that reversible positive charge annealing plays a key role in the postirradiation response of the MOST. A mathematical model of reversible charge relaxation process is suggested
  • Keywords
    MOSFET; annealing; electric charge; radiation effects; semiconductor device models; thermal stresses; MOS transistor; electrical stresses; mathematical model; n-channel MOSTs; nMOSFETs; postirradiation response; reversible charge relaxation process; reversible positive charge annealing; thermal stresses; Annealing; Electron traps; Instruments; MOSFETs; Mathematical model; Physics; Thermal stresses; Thermoelectric devices; Thermoelectricity; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.510716
  • Filename
    510716
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1095059