DocumentCode :
1095065
Title :
IIB-2 a novel high-performance MOSFET fabricated using focused ion-beam doping
Author :
Shukuri, S. ; Tamura, Masato ; Masuda, Hiroji ; Ishitani, T.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1964
Lastpage :
1965
Keywords :
Aluminum; Copper; Doping; Impurities; Laboratories; MOSFET circuits; Silicon; Threshold voltage; Titanium; Tungsten;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21834
Filename :
1484119
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095065
