Title :
IIB-4 properties and deposition of low-pressure CVD tungsten-silicon films
Author :
Monnig, K.A. ; Saraswat, Krishna C.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Aluminum; Conductivity; Contact resistance; Electromigration; Integrated circuit interconnections; Oxidation; Plasma temperature; Semiconductor films; Tungsten; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21836
