DocumentCode :
109510
Title :
Fabrication and Characterization of Superconducting Nanowire Single-Photon Detectors on Si Waveguide
Author :
Waki, Kentaro ; Yamashita, Taro ; Inoue, Shin-ichiro ; Miki, Shigehito ; Terai, Hirotaka ; Ikuta, Rikizo ; Yamamoto, Takashi ; Imoto, Nobuyuki
Author_Institution :
Dept. of Mater. Eng. Sci., Osaka Univ., Toyonaka, Japan
Volume :
25
Issue :
3
fYear :
2015
fDate :
Jun-15
Firstpage :
1
Lastpage :
4
Abstract :
We report the fabrication and characterization of a niobium titanium nitride (NbTiN)-based superconducting nanowire single-photon detector (SSPD or SNSPD) on the Si waveguide toward the realization of waveguide-coupled SSPD. The device consists of a silicon optical waveguide fabricated using a silicon-on-insulator (SOI) substrate and a 100-nm-wide NbTiN nanowire constructed on the waveguide, with an inductor to prevent latch operation. For the fabricated device, the observed superconducting critical temperature and critical current were 7.85 K and 34.4 μA at 0.3 K, respectively. We investigated the optical response of the fabricated device and found that the device exhibited a single-photon response by measuring of the input power dependence of the output count rate. Furthermore, the fabricated device showed a clear bias current dependence of the output counts similar to conventional SSPDs, and the pulse-generation probability is estimated to be 90.1% based on two assumptions: a sigmoidal model to the detection efficiency and the device has a 100% pulse-generation probability at the saturated region.
Keywords :
critical current density (superconductivity); elemental semiconductors; nanowires; niobium compounds; optical waveguides; photon counting; silicon; silicon-on-insulator; superconducting photodetectors; superconducting transition temperature; titanium compounds; type II superconductors; NbTiN; Si; bias current dependence; detection efficiency; inductor; input power; latch operation; pulse-generation probability; sigmoidal model; silicon optical waveguide; silicon-on-insulator substrate; single-photon response; size 100 nm; superconducting critical current; superconducting critical temperature; superconducting nanowire single-photon detectors; temperature 0.3 K; waveguide-coupled SSPD; Detectors; Nanoscale devices; Optical device fabrication; Optical pulses; Optical waveguides; Photonics; Silicon; Niobium titanium nitride (NbTiN); optical waveguide; silicon-on-insulator (SOI) substrate; superconducting nanowire single-photon detectors (SSPDs);
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2014.2385836
Filename :
6998043
Link To Document :
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