Title :
Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects
Author :
Derewonko, H. ; Bosella, A. ; Pataut, G. ; Perié, D. ; Pinsard, J.L. ; Sentubery, C. ; Verbeck, C. ; Bressy, P. ; Augier, P.
Author_Institution :
Thomson-CSF-TCS, Orsay, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
An evaluation programme of Thomson CSF-TCS GaAs low noise and power MMIC technologies to 1 MeV equivalent neutron fluence levels, up to 1×1015 n/cm2, ionizing 1.17-1.33 MeV Co 60 dose levels in excess of 200 Mrad(GaAs) and dose rate levels reaching 1.89×1011 rad(GaAs)/s is presented in terms of proper components and parameter choices, DC/RF electrical measurements and test methods under irradiation. Experimental results are explained together with drift analyses of electrical parameters that have determined threshold limits of component degradations. Modelling the effects of radiation on GaAs components relies on degradation analysis of active layer which appears to be the most sensitive factor. MMICs degradation under neutron fluence was simulated from irradiated FET data. Finally, based on sensitivity of technological parameters, rad-hard design including material, technology and MMIC design enhancement is discussed
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; integrated circuit modelling; integrated circuit noise; neutron effects; power integrated circuits; radiation effects; radiation hardening (electronics); 200 Mrad; Co60 dose levels; GaAs; GaAs low noise MMIC technologies; GaAs power MMIC technologie; MMIC design enhancement; Thomson CSF-TCS; active layer; component degradations; degradation analysis; dose rate effects; drift analyses; electrical measurements; electrical parameters; ionizing dose effects; irradiated FET data; modelling; neutron effects; radiation-hard design; test methods; threshold limits; Degradation; Electric variables measurement; Gallium arsenide; MMICs; Neutrons; Noise level; Noise measurement; Power measurement; Radio frequency; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on