DocumentCode :
1095132
Title :
IIB-6 recent advances in the rapid thermal annealing of boron and BF2+implanted source-drain junctions for submicrometer CMOS technology
Author :
Vasudev, P.K. ; Schmitz, A. ; Olson, G.L.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1966
Lastpage :
1966
Keywords :
Alpha particles; Boron; CMOS technology; Conductivity; Implants; Laboratories; P-n junctions; Pulsed power supplies; Rapid thermal annealing; Temperature measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21839
Filename :
1484124
Link To Document :
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