Title :
Laterally Coupled DFB Lasers With Self-Aligned Metal Surface Grating by Holographic Lithography
Author :
Jang, S.J. ; Yu, J.S. ; Lee, Y.T.
Author_Institution :
Gwangju Inst. of Sci. & Technol., Gwangju
fDate :
4/1/2008 12:00:00 AM
Abstract :
A laterally coupled InGaAsP-InP distributed-feedback (DFB) laser operating around 1.55 mum was fabricated through a novel technique for the formation of metal surface gratings by holographic lithography. The self-aligned Cr DFB gratings were formed on the sidewalls as well as on both sides of the laser ridge by means of angled e-beam evaporation of Ti mask and metal-SiO2 lift-off on the top of ridges. For an uncoated 3-mum-wide and 300-mum-long cavity, the device emitted an output power of ~9.7 mW/facet at an injection current of 100 mA with a threshold current of 29 mA and a slope efficiency of 0.14 mW/mA per facet at 20 degC under continuous-wave mode. A stable single-mode emission near 1.54 mum with a sidemode suppression ratio of nearly 28 dB was observed and a tuning coefficient of 0.21 nm/K was obtained in the temperature range of 15 degC -55 degC.
Keywords :
distributed feedback lasers; electron beam lithography; gallium arsenide; holographic gratings; holography; indium compounds; laser modes; laser stability; laser tuning; photolithography; quantum well lasers; Cr DFB gratings; DFB lasers; InGaAsP-InP; InGaAsP-InP distributed-feedback laser; angled e-beam evaporation; current 29 mA; holographic lithography; injection current; self-aligned metal surface grating; sidemode suppression ratio; slope efficiency; stable single-mode emission; temperature 15 degC to 55 degC; temperature 20 degC; threshold current; wavelength 1.54 mum; wavelength 1.55 mum; Chromium; Gratings; Holography; Laser tuning; Lithography; Optical coupling; Power generation; Surface emitting lasers; Temperature distribution; Threshold current; Distributed-feedback (DFB) lasers; InGaAsP–InGaAsP multiple quantum-wells (MQWs); holographic lithography; laterally coupled;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.918864