Title :
A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event
Author :
Marec, Ronan ; Mary, Patrick ; Gaillard, Rémi ; Palau, Jean-Marie ; Bruguier, Guy ; Gasiot, Jean
Author_Institution :
Nucletudes SA, Courtaboeuf-Orsay, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds
Keywords :
CMOS memory circuits; SRAM chips; equivalent circuits; integrated circuit modelling; radiation effects; simulation; SRAM behaviour; SRAM design; TS4T1601; dose-rate event; dose-rate thresholds; dose-rate upset patterns; electrical simulations; fabrication process; mask misalignments; standby mode; static RAM; Analytical models; Circuits; Fabrication; Pattern analysis; Random access memory; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
