DocumentCode :
1095144
Title :
Wideband, Low Driving Voltage Traveling-Wave Mach–Zehnder Modulator for RF Photonics
Author :
Jarrahi, Mona ; Lee, Thomas H. ; Miller, David A B
Author_Institution :
Stanford Univ., Stanford
Volume :
20
Issue :
7
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
517
Lastpage :
519
Abstract :
We report the design, fabrication, and testing of a traveling-wave Mach-Zehnder modulator on a GaAs substrate. Operating at 870-nm wavelength, we obtained an extremely low driving voltage of 0.45 V and a high measurement-instrument-limited small-signal modulation bandwidth of 18 GHz, projected to an estimated bandwidth of 50 GHz. We have also monolithically integrated photodetectors with an impulse response of 8-ps full-width at half-maximum, and a saturation power of 330 mW, giving a flexible high-performance platform for RF photonics.
Keywords :
Mach-Zehnder interferometers; electro-optical modulation; microwave photonics; optical design techniques; optical fabrication; optical testing; photodetectors; RF photonics; bandwidth 18 GHz; integrated photodetectors; modulation bandwidth; power 330 mW; saturation power; traveling-wave Mach-Zehnder modulator; voltage 0.45 V; wavelength 870 nm; Bandwidth; Fabrication; Gallium arsenide; Low voltage; Optical modulation; Photonics; Radio frequency; Testing; Wavelength measurement; Wideband; Optical device fabrication; optical modulation; phase modulation; photodetectors; quantum-confined Stark effect (QCSE);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.918889
Filename :
4468803
Link To Document :
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