Title :
The use of charge-pumping for characterizing irradiated power MOSFETs
Author :
Prevost, Gwenaël ; Augier, Pascal ; Palau, Jean-Marie
Author_Institution :
Div. Radiocommun. Guerre Electron. et Securite, Thomson-CSF, Gennevilliers, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
A charge-pumping technique is proposed for characterizing radiation-induced interface traps in vertical power MOSFETs. An original setup allowing measurements on these 3-contact devices is presented. The first experimental results before and after irradiation are discussed
Keywords :
X-ray effects; electron traps; interface states; power MOSFET; charge pumping measurements; radiation-induced interface traps; three-contact devices; vertical power MOSFETs; Charge pumps; Current measurement; Electron traps; Energy states; Interface states; Lattices; MOSFETs; Performance evaluation; Silicon; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
