Title :
Optically pumped all-epitaxial wafer-fused 1.52 μm vertical-cavity lasers
Author :
Babic, D.I. ; Dudley, John J. ; Streubel, K. ; Mirin, Richard P. ; Hu, E.L. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fDate :
4/29/1994 12:00:00 AM
Abstract :
The authors demonstrate for the first time the room-temperature pulsed operation of all-epitaxial vertical cavity lasers operating at 1.52 μm using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AlAs/GaAs mirror using the wafer fusion technique
Keywords :
III-V semiconductors; indium compounds; laser cavity resonators; mirrors; molecular beam epitaxial growth; optical pumping; semiconductor growth; semiconductor lasers; 1.52 mum; AlAs; GaAs; InGaAsP; InGaAsP active layer; InGaAsP/InP mirror; InP; MBE-grown AlAs/GaAs mirror; MOCVD-grown; all-epitaxial wafer-fused; laser cavity; optical pumping; optically pumped; room-temperature pulsed operation; vertical-cavity lasers; wafer fusion technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940495
