DocumentCode
1095165
Title
IIIA-3 modulation-doped field-effect transistors and logic gates based on two-dimensional hole gas
Author
Kiehl, R.A. ; Stormer, H.L. ; Baldwin, Kenneth ; Gossard, Arthur C.
Volume
31
Issue
12
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
1968
Lastpage
1968
Keywords
Epitaxial layers; FETs; Gallium arsenide; Inverters; Logic circuits; Logic gates; Propagation delay; Transconductance; Two dimensional hole gas; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21843
Filename
1484128
Link To Document