Title :
IIIA-3 modulation-doped field-effect transistors and logic gates based on two-dimensional hole gas
Author :
Kiehl, R.A. ; Stormer, H.L. ; Baldwin, Kenneth ; Gossard, Arthur C.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Epitaxial layers; FETs; Gallium arsenide; Inverters; Logic circuits; Logic gates; Propagation delay; Transconductance; Two dimensional hole gas; Voltage-controlled oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21843
