Title :
IIIA-4 P-channel Ga0.5Al0.5As/GaAs MODFET´s
Author :
Wang, W.I. ; Tiwari, Sunita
fDate :
12/1/1984 12:00:00 AM
Keywords :
Circuit testing; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Hall effect; Heterojunctions; Logic devices; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21844
