The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasers

Author

Manning, Joanne ; Olshansky, Robert ; Su, Chin Bing

Author_Institution

GTE Laboratories, Waltham, MA, USA

Volume

19

Issue

10

fYear

1983

fDate

10/1/1983 12:00:00 AM

Firstpage

1525

Lastpage

1530

Abstract

The carrier-induced index change has been measured for a large number of broad-area AlGaAs and 1.3 μm InGaAsP diode lasers. The observed index change with injected carrier density is $-(1.2 \\pm 0.2) \\times 10^{-20}$ cm³for AlGaAs lasers and $-(2.8 \\pm 0.6) \\times 10^{20}$ cm³for 1.3 μm lasers. The index change at threshold varies from -0.03 to -0.06 for AlGaAs lasers and from -0.04 to -0.10 for InGaAsP lasers. This variation is correlated with the carrier density at threshold, which depends on active layer thickness and doping level. For the first time, the observed index change is compared to the carrier density found from differential carrier lifetime measurements. This accurate determination of the carrier density represents a significant improvement over previous studies.

Keywords

Aluminum materials/devices; Gallium materials/lasers; Indium materials/devices; Optical refraction; Absorption; Charge carrier density; Charge carrier lifetime; Diode lasers; Doping; Laser modes; Laser transitions; Optical materials; Pulse measurements; Quantum well lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1983.1071749

Filename

1071749