DocumentCode

1095197

Title

IIIA-6 an analysis of low source resistance HEMT with multiple cap layer

Author

Lee, S.J. ; Crowell, C.R.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1969

Lastpage

1969

Keywords

Current density; Design optimization; Doping; Gallium arsenide; Gratings; HEMTs; Microelectronics; Semiconductor process modeling; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21845

Filename

1484130