Title :
IIIA-6 an analysis of low source resistance HEMT with multiple cap layer
Author :
Lee, S.J. ; Crowell, C.R.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Current density; Design optimization; Doping; Gallium arsenide; Gratings; HEMTs; Microelectronics; Semiconductor process modeling; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21845
