DocumentCode
1095198
Title
Engineering of barrier band structure for electroabsorption MQW modulators
Author
Sahara, R. ; Morito, Ken ; Soda, H.
Author_Institution
Fujitsu Labs. Ltd., Atsugi
Volume
30
Issue
9
fYear
1994
fDate
4/29/1994 12:00:00 AM
Firstpage
698
Lastpage
699
Abstract
The introduction of tensile strain to the barriers of InGaAsP multiquantum well, λ=1.55 μm, electroabsorption modulators is proposed. It decreases the valence band barrier height, and heavy hole escape time, which greatly increases the optical saturation intensity leading to smaller, lower capacitance modulators with greater power handling capabilities
Keywords
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical modulation; optical saturable absorption; semiconductor quantum wells; 1.55 micron; InGaAsP; barrier band structure; capacitance; electroabsorption MQW modulators; heavy hole escape time; integrated optics; optical saturation intensity; power handling capabilities; tensile strain; valence band barrier height;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940509
Filename
289178
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