Title :
Engineering of barrier band structure for electroabsorption MQW modulators
Author :
Sahara, R. ; Morito, Ken ; Soda, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
4/29/1994 12:00:00 AM
Abstract :
The introduction of tensile strain to the barriers of InGaAsP multiquantum well, λ=1.55 μm, electroabsorption modulators is proposed. It decreases the valence band barrier height, and heavy hole escape time, which greatly increases the optical saturation intensity leading to smaller, lower capacitance modulators with greater power handling capabilities
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical modulation; optical saturable absorption; semiconductor quantum wells; 1.55 micron; InGaAsP; barrier band structure; capacitance; electroabsorption MQW modulators; heavy hole escape time; integrated optics; optical saturation intensity; power handling capabilities; tensile strain; valence band barrier height;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940509
