DocumentCode

1095222

Title

IIIA-5 two-dimensional simulation of HEMT and GaAs gate heterojunction FET

Author

Tang, J.Y.-F.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1969

Lastpage

1969

Keywords

Electron mobility; FETs; Gallium arsenide; HEMTs; Heterojunctions; Nonhomogeneous media; Rough surfaces; Surface resistance; Surface roughness; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21847

Filename

1484132