Title :
IIIA-5 two-dimensional simulation of HEMT and GaAs gate heterojunction FET
fDate :
12/1/1984 12:00:00 AM
Keywords :
Electron mobility; FETs; Gallium arsenide; HEMTs; Heterojunctions; Nonhomogeneous media; Rough surfaces; Surface resistance; Surface roughness; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21847
