DocumentCode
1095229
Title
Single event damage effects in cryogenic CMOS microelectronics
Author
Pickel, James C.
Author_Institution
Maxwell Labs., Mission Viejo, CA, USA
Volume
43
Issue
3
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
912
Lastpage
917
Abstract
Cryogenic microelectronics, as used in focal plane arrays in space-based optical sensors, are potentially vulnerable to single event damage effects from energetic heavy ions and protons. Results are presented for numerical simulation and analytical assessment of potential effects in generic FPAs. Present-generation FPAs are not likely to be affected by single event damage, but the potential will increase as minimum transistor size is made smaller
Keywords
CMOS integrated circuits; cryogenic electronics; focal planes; image sensors; integrated circuit modelling; ion beam effects; proton effects; space vehicle electronics; cryogenic CMOS microelectronics; focal plane arrays; heavy ion irradiation; numerical simulation; proton irradiation; single event damage; space-based optical sensors; CMOS integrated circuits; Cryogenics; Electron traps; MOSFET circuits; Microelectronics; Optical arrays; Optical sensors; Protons; Sensor arrays; Temperature sensors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.510733
Filename
510733
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