DocumentCode :
1095229
Title :
Single event damage effects in cryogenic CMOS microelectronics
Author :
Pickel, James C.
Author_Institution :
Maxwell Labs., Mission Viejo, CA, USA
Volume :
43
Issue :
3
fYear :
1996
fDate :
6/1/1996 12:00:00 AM
Firstpage :
912
Lastpage :
917
Abstract :
Cryogenic microelectronics, as used in focal plane arrays in space-based optical sensors, are potentially vulnerable to single event damage effects from energetic heavy ions and protons. Results are presented for numerical simulation and analytical assessment of potential effects in generic FPAs. Present-generation FPAs are not likely to be affected by single event damage, but the potential will increase as minimum transistor size is made smaller
Keywords :
CMOS integrated circuits; cryogenic electronics; focal planes; image sensors; integrated circuit modelling; ion beam effects; proton effects; space vehicle electronics; cryogenic CMOS microelectronics; focal plane arrays; heavy ion irradiation; numerical simulation; proton irradiation; single event damage; space-based optical sensors; CMOS integrated circuits; Cryogenics; Electron traps; MOSFET circuits; Microelectronics; Optical arrays; Optical sensors; Protons; Sensor arrays; Temperature sensors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.510733
Filename :
510733
Link To Document :
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