Title :
IIIB-2 mean time to failure model for hot-carrier-induced degradation
Author :
Chen, K.L. ; Scott, David B.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Ballistic transport; Degradation; Gallium arsenide; Hot carriers; MOSFETs; Pulse measurements; Silicon; Stress; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21848
