Title :
IIIB-1 degradation of 77-K MOSFET characteristics due to channel hot electrons
Author :
Sun, J.Y.C. ; Wordeman, M.R.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Analytical models; Channel hot electron injection; Degradation; FETs; Impurities; Interface states; MOSFET circuits; Silicon; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21849
