Title :
IIIB-4 noise associated with substrate current in fine-line NMOS field-effect transistors
Author :
Jindal, Renuka P.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Active noise reduction; Annealing; Electron traps; FETs; Impact ionization; MOS devices; Noise generators; Noise level; Noise measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21850
