Title :
IIIB-3 Search for ballistic transport in submicronmeter n-channel Silicon MOSFET´s at low temperatures
Author :
Robertson, P.J. ; Dumin, D.D.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Ballistic transport; Gallium arsenide; MOSFETs; Noise generators; Noise level; Semiconductor device noise; Silicon; Substrates; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21851
