DocumentCode

1095264

Title

IIIB-3 Search for ballistic transport in submicronmeter n-channel Silicon MOSFET´s at low temperatures

Author

Robertson, P.J. ; Dumin, D.D.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1971

Lastpage

1971

Keywords

Ballistic transport; Gallium arsenide; MOSFETs; Noise generators; Noise level; Semiconductor device noise; Silicon; Substrates; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21851

Filename

1484136