Title :
IIIB-5 high-field electron capture and emission in nitrided oxides
Author :
Wyatt, P.W. ; Senturia, S.D.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Active noise reduction; Annealing; Electron traps; Impact ionization; MOS devices; Noise generators; Noise level; Noise measurement; Radioactive decay; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21852
