Title :
Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]
Author :
Mouret, I. ; Calvet, M.-C. ; Calvel, P. ; Tastet, P. ; Allenspach, M. ; LaBel, K.A. ; Titus, J.L. ; Wheatley, C.F. ; Schrimpf, R.D. ; Galloway, K.F.
Author_Institution :
Motorola Semicond., Toulouse, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments, conducted on power DMOS transistors, show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity
Keywords :
avalanche breakdown; ion beam effects; power MOSFET; semiconductor device testing; 25 to 110 C; SEGR sensitivity; angular dependence; breakdown voltage; elevated temperature; medium energy heavy ions; normal incident angle; oxide response; power DMOS transistors; single-event gate rupture; substrate response; temperature dependence; Charge carrier processes; Cranes; Electrodes; MOSFET circuits; Neck; Power MOSFET; Substrates; Temperature dependence; Temperature sensors; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
