DocumentCode :
1095280
Title :
IVA-1 new low dark current high-speed Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode by molecular-beam epitaxy for long wavelength fiber optic communication systems
Author :
Capasso, Federico ; Alavi, K. ; Cho, Andrew Y. ; Parsey, J.M. ; Kasper, B.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1972
Lastpage :
1973
Keywords :
Annealing; Charge carrier processes; Current measurement; Dark current; Density measurement; Dielectrics; Electron traps; Nitrogen; Stress measurement; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21853
Filename :
1484138
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095280
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