Title :
IIIB-6 analysis of current transport and charge trapping in ultrathin nitrided oxide MIS capacitors
Author :
Chang, S.T. ; Lyon, S.A. ; Johnson, Noble M.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; Capacitors; Charge carrier processes; Current measurement; Density measurement; Dielectrics; Electron traps; Nitrogen; Stress measurement; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21854
